POWER BIPOLAR TRANSISTOR NPN
IGP01N120H2 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. POWER BIPOLAR TRANSISTOR NPN. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 3.2 A.
In Stock: 13,000
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 3.2 A |
| Current - Collector Pulsed (Icm) | 3.5 A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 1A |
| Power - Max | 28 W |
| Switching Energy | 140µJ |
| Input Type | Standard |
| Gate Charge | 8.6 nC |
| Td (on/off) @ 25°C | 13ns/370ns |
| Test Condition | 800V, 1A, 241Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | PG-TO220-3-1 |
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3J LIMITED
