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IGOT60R070D1AUMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IGOT60R070D1AUMA1

Infineon Technologies

GANFET N-CH 600V 31A 20DSO

IGOT60R070D1AUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. GANFET N-CH 600V 31A 20DSO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 20-PowerSOIC (0.433", 11.00mm Width).

In Stock: 288

Product Attributes

AttributeValue
Product StatusObsolete
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-10V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 400 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-DSO-20-87
Package / Case20-PowerSOIC (0.433", 11.00mm Width)

Frequently Asked Questions

IGOT60R070D1AUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. GANFET N-CH 600V 31A 20DSO

The mounting type of IGOT60R070D1AUMA1 is Surface Mount.

The operating temperature range of IGOT60R070D1AUMA1 is -55°C ~ 150°C (TJ).

The package type of IGOT60R070D1AUMA1 is 20-PowerSOIC (0.433", 11.00mm Width).

Yes, IGOT60R070D1AUMA1 is listed as Obsolete. Consider requesting a quote for alternative parts.

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