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IGB03N120H2ATMA1 - Infineon Technologies - Transistors - IGBTs - Single

IGB03N120H2ATMA1

Infineon Technologies

IGBT 1200V 9.6A 62.5W TO263-3

IGB03N120H2ATMA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 1200V 9.6A 62.5W TO263-3. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 9.6 A.

In Stock: 4,018

Product Attributes

AttributeValue
Product StatusLast Time Buy
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)9.6 A
Current - Collector Pulsed (Icm)9.9 A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 3A
Power - Max62.5 W
Switching Energy290µJ
Input TypeStandard
Gate Charge22 nC
Td (on/off) @ 25°C9.2ns/281ns
Test Condition800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3-2

Frequently Asked Questions

IGB03N120H2ATMA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 1200V 9.6A 62.5W TO263-3

The mounting type of IGB03N120H2ATMA1 is Surface Mount.

The operating temperature range of IGB03N120H2ATMA1 is -40°C ~ 150°C (TJ).

The package type of IGB03N120H2ATMA1 is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Yes, IGB03N120H2ATMA1 is listed as Last Time Buy. Consider requesting a quote for alternative parts.

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