RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
FZ2000R33HE4BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules

FZ2000R33HE4BOSA1

Infineon Technologies

IGBT MOD IHV IHM T XHP 3 3-6 5K

FZ2000R33HE4BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD IHV IHM T XHP 3 3-6 5K. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Module, current - collector (ic) (max) 2000 A.

In Stock: 10

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationSingle Switch
Voltage - Collector Emitter Breakdown (Max)3300 V
Current - Collector (Ic) (Max)2000 A
Power - Max4.2 mW
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 2kA (Typ)
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce280 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-IHVB190-3

Frequently Asked Questions

FZ2000R33HE4BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD IHV IHM T XHP 3 3-6 5K

The mounting type of FZ2000R33HE4BOSA1 is Chassis Mount.

The operating temperature range of FZ2000R33HE4BOSA1 is -40°C ~ 150°C (TJ).

The package type of FZ2000R33HE4BOSA1 is Module.

Related Products

Manufacturers in Transistors - IGBTs - Modules

Need a Quote for This Part?

Submit your RFQ for FZ2000R33HE4BOSA1 and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.