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FZ1400R33HE4BPSA1 - Infineon Technologies - Transistors - IGBTs - Modules

FZ1400R33HE4BPSA1

Infineon Technologies

IGBT MODULE DIODE HVB130-3

FZ1400R33HE4BPSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE DIODE HVB130-3. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Module, current - collector (ic) (max) 1400 A.

In Stock: 2

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)3300 V
Current - Collector (Ic) (Max)1400 A
Power - Max-
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 1400A (Typ)
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce187 nF @ 25 V
InputSingle Phase Bridge Rectifier
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

Frequently Asked Questions

FZ1400R33HE4BPSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE DIODE HVB130-3

The mounting type of FZ1400R33HE4BPSA1 is Chassis Mount.

The operating temperature range of FZ1400R33HE4BPSA1 is -40°C ~ 150°C (TJ).

The package type of FZ1400R33HE4BPSA1 is Module.

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