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FS660R08A6P2FLBBPSA1 - Infineon Technologies - Transistors - IGBTs - Modules

FS660R08A6P2FLBBPSA1

Infineon Technologies

HYBRID PACK DRIVE

FS660R08A6P2FLBBPSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. HYBRID PACK DRIVE. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Module, current - collector (ic) (max) 450 A.

In Stock: 5,434

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)750 V
Current - Collector (Ic) (Max)450 A
Power - Max1053 W
Vce(on) (Max) @ Vge, Ic1.35V @ 15V, 450A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce80 nF @ 50 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-HYBRIDD-1

Frequently Asked Questions

FS660R08A6P2FLBBPSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. HYBRID PACK DRIVE

The mounting type of FS660R08A6P2FLBBPSA1 is Chassis Mount.

The operating temperature range of FS660R08A6P2FLBBPSA1 is -40°C ~ 150°C (TJ).

The package type of FS660R08A6P2FLBBPSA1 is Module.

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