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FP100R12KT4BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules

FP100R12KT4BOSA1

Infineon Technologies

IGBT MOD 1200V 100A 515W

FP100R12KT4BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 100A 515W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 100 A.

In Stock: 3

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)100 A
Power - Max515 W
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 100A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce6.3 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

Frequently Asked Questions

FP100R12KT4BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 100A 515W

The mounting type of FP100R12KT4BOSA1 is Chassis Mount.

The operating temperature range of FP100R12KT4BOSA1 is -40°C ~ 150°C.

The package type of FP100R12KT4BOSA1 is Module.

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