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FF400R12KT3EHOSA1 - Infineon Technologies - Transistors - IGBTs - Modules

FF400R12KT3EHOSA1

Infineon Technologies

IGBT MOD 1200V 580A 2000W

FF400R12KT3EHOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 580A 2000W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 580 A.

In Stock: 253

Product Attributes

AttributeValue
Product StatusNot For New Designs
IGBT Type-
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)580 A
Power - Max2000 W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 400A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce28 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

Frequently Asked Questions

FF400R12KT3EHOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 580A 2000W

The mounting type of FF400R12KT3EHOSA1 is Chassis Mount.

The operating temperature range of FF400R12KT3EHOSA1 is -40°C ~ 125°C.

The package type of FF400R12KT3EHOSA1 is Module.

Yes, FF400R12KT3EHOSA1 is listed as Not For New Designs. Consider requesting a quote for alternative parts.

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