IGBT MODULE 1200V 1050W
FF200R12KT3EHOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1200V 1050W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, power - max 1050 W.
In Stock: 4
| Attribute | Value |
|---|---|
| Product Status | Not For New Designs |
| IGBT Type | - |
| Configuration | 2 Independent |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | - |
| Power - Max | 1050 W |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 200A |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 14 nF @ 25 V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -40°C ~ 125°C |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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