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FD200R12KE3PHOSA1 - Infineon Technologies - Transistors - IGBTs - Modules

FD200R12KE3PHOSA1

Infineon Technologies

IGBT MODULE 1200V 200A

FD200R12KE3PHOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1200V 200A. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 200 A.

In Stock: 1,313

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)200 A
Power - Max-
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 200A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce14 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

Frequently Asked Questions

FD200R12KE3PHOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1200V 200A

The mounting type of FD200R12KE3PHOSA1 is Chassis Mount.

The operating temperature range of FD200R12KE3PHOSA1 is -40°C ~ 125°C.

The package type of FD200R12KE3PHOSA1 is Module.

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