RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
DF80R12W2H3FB11BPSA1 - Infineon Technologies - Transistors - IGBTs - Modules

DF80R12W2H3FB11BPSA1

Infineon Technologies

IGBT MOD 1200V 20A 20MW

DF80R12W2H3FB11BPSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 20A 20MW. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Module, current - collector (ic) (max) 20 A.

In Stock: 15

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)20 A
Power - Max20 mW
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 20A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce2.35 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

Frequently Asked Questions

DF80R12W2H3FB11BPSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 20A 20MW

The mounting type of DF80R12W2H3FB11BPSA1 is Chassis Mount.

The operating temperature range of DF80R12W2H3FB11BPSA1 is -40°C ~ 150°C (TJ).

The package type of DF80R12W2H3FB11BPSA1 is Module.

Related Products

Manufacturers in Transistors - IGBTs - Modules

Need a Quote for This Part?

Submit your RFQ for DF80R12W2H3FB11BPSA1 and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.