IGBT MOD 1200V 30A 375W
DF200R12W1H3B27BOMA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 30A 375W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 30 A.
In Stock: 2,958
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | - |
| Configuration | 2 Independent |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 30 A |
| Power - Max | 375 W |
| Vce(on) (Max) @ Vge, Ic | 1.3V @ 15V, 30A |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 2 nF @ 25 V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
Submit your RFQ for DF200R12W1H3B27BOMA1 and get a quote within 24 hours.
3J LIMITED
