IC SRAM 18MBIT PARALLEL 256FBGA
CYDD18S36V18-200BBXC is a Memory manufactured by Infineon Technologies. IC SRAM 18MBIT PARALLEL 256FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 1.42V ~ 1.58V, 1.7V ~ 1.9V, package / case 256-LBGA.
In Stock: 8,189
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Synchronous |
| Memory Size | 18Mb (256K x 36 x 2) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 500 ps |
| Voltage - Supply | 1.42V ~ 1.58V, 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 256-LBGA |
| Supplier Device Package | 256-FBGA (17x17) |
CYDD18S36V18-200BBXC is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43DR16160B-37CBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | 83% | View |
| MT47H32M16BN-37E IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 83% | View |
| MT47H32M16CC-37E L:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 83% | View |
| MT47H32M16CC-37E IT:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 83% | View |
| IS43DR82560C-3DBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 60TWBGA | 70% | View |
| IS43DR81280B-25EBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 61% | View |
Submit your RFQ for CYDD18S36V18-200BBXC and get a quote within 24 hours.
3J LIMITED
