IC SRAM 9MBIT PARALLEL 256FBGA
CYDD09S36V18-167BBXC is a Memory manufactured by Infineon Technologies. IC SRAM 9MBIT PARALLEL 256FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 1.42V ~ 1.58V, 1.7V ~ 1.9V, package / case 256-LBGA.
In Stock: 3,138
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Synchronous |
| Memory Size | 9Mb (128K x 36 x 2) |
| Memory Interface | Parallel |
| Clock Frequency | 167 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 600 ps |
| Voltage - Supply | 1.42V ~ 1.58V, 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 256-LBGA |
| Supplier Device Package | 256-FBGA (17x17) |
CYDD09S36V18-167BBXC is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| CYDD18S36V18-167BBXC | Infineon Technologies | IC SRAM 18MBIT PARALLEL 256FBGA | 100% | View |
| CYDD18S72V18-167BBXI | Infineon Technologies | IC SRAM 18MBIT PARALLEL 256FBGA | 100% | View |
| MT47H32M16BN-5E:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 88% | View |
| MT47H32M16CC-5E:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 88% | View |
| MT47H128M8B7-5E L:A TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 92FBGA | 88% | View |
| MT47H128M8B7-5E:A TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 92FBGA | 88% | View |
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