IC SRAM 18MBIT PARALLEL 165FBGA
CY7C1312KV18-300BZXIT is a Memory manufactured by Infineon Technologies. IC SRAM 18MBIT PARALLEL 165FBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.9V, package / case 165-LBGA.
In Stock: 3,433
| Attribute | Value |
|---|---|
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Synchronous |
| Memory Size | 18Mbit |
| Memory Organization | 1M x 18 |
| Memory Interface | Parallel |
| Clock Frequency | 300 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 0.45 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-FBGA (13x15) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43DR86400C-3DBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TWBGA | 95% | View |
| IS43DR16160B-3DBI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 84TWBGA | 95% | View |
| MT47H128M8CF-3 IT:H | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 60FBGA | 95% | View |
| IS43DR16128A-3DBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 84LFBGA | 95% | View |
| MT47H128M8CF-3 AAT:H TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 60FBGA | 95% | View |
| IS43DR16640B-25EBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 84TWBGA | 85% | View |
Submit your RFQ for CY7C1312KV18-300BZXIT and get a quote within 24 hours.
3J LIMITED
