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BSZ900N20NS3GATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

BSZ900N20NS3GATMA1

Infineon Technologies

MOSFET N-CH 200V 15.2A 8TSDSON

BSZ900N20NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 15.2A 8TSDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

In Stock: 7,029

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C15.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs90mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs11.6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 100 V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8
Package / Case8-PowerTDFN

Frequently Asked Questions

BSZ900N20NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 15.2A 8TSDSON

The mounting type of BSZ900N20NS3GATMA1 is Surface Mount.

The operating temperature range of BSZ900N20NS3GATMA1 is -55°C ~ 150°C (TJ).

The package type of BSZ900N20NS3GATMA1 is 8-PowerTDFN.

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