BSM150GB170DN2 - INSULATED GATE
BSM150GB170DN2E3256HDLA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. BSM150GB170DN2 - INSULATED GATE. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case Module, current - collector (ic) (max) 300 A.
In Stock: 125
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | - |
| Configuration | 2 Independent |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector (Ic) (Max) | 300 A |
| Power - Max | 1250 W |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 150A |
| Current - Collector Cutoff (Max) | 300 µA |
| Input Capacitance (Cies) @ Vce | 10 nF @ 25 V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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