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BSC109N10NS3GATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

BSC109N10NS3GATMA1

Infineon Technologies

MOSFET N-CH 100V 63A TDSON-8-1

BSC109N10NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 63A TDSON-8-1. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

In Stock: 2,076

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs10.9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id3.5V @ 45µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 50 V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

Frequently Asked Questions

BSC109N10NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 63A TDSON-8-1

The mounting type of BSC109N10NS3GATMA1 is Surface Mount.

The operating temperature range of BSC109N10NS3GATMA1 is -55°C ~ 150°C (TJ).

The package type of BSC109N10NS3GATMA1 is 8-PowerTDFN.

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