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BSC0805LSATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

BSC0805LSATMA1

Infineon Technologies

MOSFET N-CH 100V 79A TDSON-8-6

BSC0805LSATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 79A TDSON-8-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

In Stock: 4,076

Product Attributes

AttributeValue
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.3V @ 49µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 50 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-6
Package / Case8-PowerTDFN

Frequently Asked Questions

BSC0805LSATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 79A TDSON-8-6

The mounting type of BSC0805LSATMA1 is Surface Mount.

The operating temperature range of BSC0805LSATMA1 is -55°C ~ 150°C (TJ).

The package type of BSC0805LSATMA1 is 8-PowerTDFN.

Yes, BSC0805LSATMA1 is listed as Not For New Designs. Consider requesting a quote for alternative parts.

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