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BCR196E6327 - Infineon Technologies - Transistors - Bipolar (BJT) - Single, Pre-Biased

BCR196E6327

Infineon Technologies

BIPOLAR DIGITAL TRANSISTOR

BCR196E6327 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Infineon Technologies. BIPOLAR DIGITAL TRANSISTOR. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 70 mA, power - max 200 mW.

In Stock: 60,000

Product Attributes

AttributeValue
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)70 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition150 MHz
Power - Max200 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23-3-11

Frequently Asked Questions

BCR196E6327 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Infineon Technologies. BIPOLAR DIGITAL TRANSISTOR

The mounting type of BCR196E6327 is Surface Mount.

The package type of BCR196E6327 is TO-236-3, SC-59, SOT-23-3.

The current rating of BCR196E6327 is 70 mA.

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