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BCR10PNH6730 - Infineon Technologies - Transistors - Bipolar (BJT) - Arrays, Pre-Biased

BCR10PNH6730

Infineon Technologies

BIPOLAR DIGITAL TRANSISTOR

BCR10PNH6730 is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Infineon Technologies. BIPOLAR DIGITAL TRANSISTOR. Key specifications: mounting type Surface Mount, package / case 6-VSSOP, SC-88, SOT-363, current - collector (ic) (max) 100mA, power - max 250mW.

In Stock: 29,907

Product Attributes

AttributeValue
Product StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition130MHz
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-6-1

Frequently Asked Questions

BCR10PNH6730 is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Infineon Technologies. BIPOLAR DIGITAL TRANSISTOR

The mounting type of BCR10PNH6730 is Surface Mount.

The package type of BCR10PNH6730 is 6-VSSOP, SC-88, SOT-363.

The current rating of BCR10PNH6730 is 100mA.

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