BIPOLAR GEN PURPOSE TRANSISTOR
BC857BWE6327 is a Transistors - Bipolar (BJT) - Single manufactured by Infineon Technologies. BIPOLAR GEN PURPOSE TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-70, SOT-323, current - collector (ic) (max) 100 mA.
In Stock: 333,000
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Power - Max | 250 mW |
| Frequency - Transition | 250MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | PG-SOT323 |
Submit your RFQ for BC857BWE6327 and get a quote within 24 hours.
3J LIMITED
