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AIKW50N65RF5XKSA1 - Infineon Technologies - Transistors - IGBTs - Single

AIKW50N65RF5XKSA1

Infineon Technologies

SIC_DISCRETE

AIKW50N65RF5XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. SIC_DISCRETE. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 80 A.

In Stock: 8,785

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)150 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max250 W
Switching Energy310µJ (on), 120µJ (off)
Input TypeStandard
Gate Charge109 nC
Td (on/off) @ 25°C20ns/156ns
Test Condition400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

Frequently Asked Questions

AIKW50N65RF5XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. SIC_DISCRETE

The mounting type of AIKW50N65RF5XKSA1 is Through Hole.

The operating temperature range of AIKW50N65RF5XKSA1 is -40°C ~ 175°C (TJ).

The package type of AIKW50N65RF5XKSA1 is TO-247-3.

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