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RFP50N05 - Harris Corporation - Transistors - FETs, MOSFETs - Single

RFP50N05

Harris Corporation

N-CHANNEL POWER MOSFET

RFP50N05 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

In Stock: 30,879

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs22mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250nA
Gate Charge (Qg) (Max) @ Vgs160 nC @ 20 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)132W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

Frequently Asked Questions

RFP50N05 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET

The mounting type of RFP50N05 is Through Hole.

The operating temperature range of RFP50N05 is -55°C ~ 175°C (TJ).

The package type of RFP50N05 is TO-220-3.

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