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RFP2N12 - Harris Corporation - Transistors - FETs, MOSFETs - Single

RFP2N12

Harris Corporation

N-CHANNEL, MOSFET

RFP2N12 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL, MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 1,550

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.75Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

Frequently Asked Questions

RFP2N12 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL, MOSFET

The mounting type of RFP2N12 is Through Hole.

The operating temperature range of RFP2N12 is -55°C ~ 150°C (TJ).

The package type of RFP2N12 is TO-220-3.

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