N-CHANNEL POWER MOSFET
RFD3N08LSM9A is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.
In Stock: 2,425
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252-3 (DPAK) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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3J LIMITED
