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RFB18N10CS - Harris Corporation - Transistors - FETs, MOSFETs - Single

RFB18N10CS

Harris Corporation

MOSFET N-CH 100V 18A TO220AB-5

RFB18N10CS is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. MOSFET N-CH 100V 18A TO220AB-5. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-5.

In Stock: 1,768

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET FeatureCurrent Sensing
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB-5
Package / CaseTO-220-5

Frequently Asked Questions

RFB18N10CS is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. MOSFET N-CH 100V 18A TO220AB-5

The mounting type of RFB18N10CS is Through Hole.

The operating temperature range of RFB18N10CS is -55°C ~ 175°C (TJ).

The package type of RFB18N10CS is TO-220-5.

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