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RF1S640SM - Harris Corporation - Transistors - FETs, MOSFETs - Single

RF1S640SM

Harris Corporation

MOSFET N-CH 200V 18A TO263AB

RF1S640SM is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. MOSFET N-CH 200V 18A TO263AB. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 805

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1275 pF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Frequently Asked Questions

RF1S640SM is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. MOSFET N-CH 200V 18A TO263AB

The mounting type of RF1S640SM is Surface Mount.

The operating temperature range of RF1S640SM is -55°C ~ 150°C (TJ).

The package type of RF1S640SM is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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