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IRFD9113 - Harris Corporation - Transistors - FETs, MOSFETs - Single

IRFD9113

Harris Corporation

-0.6A, -80V, 1.6 OHM, P-CHANNEL

IRFD9113 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. -0.6A, -80V, 1.6 OHM, P-CHANNEL. Key specifications: mounting type Through Hole, package / case 4-DIP (0.300", 7.62mm).

In Stock: 2,665

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs15 nC @ 15 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device Package4-DIP, Hexdip, HVMDIP
Package / Case4-DIP (0.300", 7.62mm)

Frequently Asked Questions

IRFD9113 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. -0.6A, -80V, 1.6 OHM, P-CHANNEL

The mounting type of IRFD9113 is Through Hole.

The package type of IRFD9113 is 4-DIP (0.300", 7.62mm).

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