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IRF520 - Harris Corporation - Transistors - FETs, MOSFETs - Single

IRF520

Harris Corporation

MOSFET N-CH 100V 9.2A TO220AB

IRF520 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. MOSFET N-CH 100V 9.2A TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

In Stock: 1,331

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs270mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

Frequently Asked Questions

IRF520 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. MOSFET N-CH 100V 9.2A TO220AB

The mounting type of IRF520 is Through Hole.

The operating temperature range of IRF520 is -55°C ~ 175°C (TJ).

The package type of IRF520 is TO-220-3.

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