RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
IRF331 - Harris Corporation - Transistors - FETs, MOSFETs - Single

IRF331

Harris Corporation

N-CHANNEL POWER MOSFET

IRF331 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-204AA, TO-3.

In Stock: 5,724

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)350 V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 25 V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3
Package / CaseTO-204AA, TO-3

Frequently Asked Questions

IRF331 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET

The mounting type of IRF331 is Through Hole.

The operating temperature range of IRF331 is -55°C ~ 150°C (TJ).

The package type of IRF331 is TO-204AA, TO-3.

Related Products

Manufacturers in Transistors - FETs, MOSFETs - Single

Need a Quote for This Part?

Submit your RFQ for IRF331 and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.