SIC SCHOTTKY DIODE 1200V 10A 3-P
G5S12010BM is a Diodes - Rectifiers - Arrays manufactured by Global Power Technology-GPT. SIC SCHOTTKY DIODE 1200V 10A 3-P. Key specifications: mounting type Through Hole, package / case TO-247-3.
In Stock: 9,762
| Attribute | Value |
|---|---|
| Product Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 19.35A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AB |
Submit your RFQ for G5S12010BM and get a quote within 24 hours.
3J LIMITED
