N100V,RD(MAX)<9M@10V,RD(MAX)<15M
GT52N10T is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N100V,RD(MAX)<9M@10V,RD(MAX)<15M. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.
In Stock: 38
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 80A |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 44.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2626 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 227W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 Full Pack |
Submit your RFQ for GT52N10T and get a quote within 24 hours.
3J LIMITED
