N650V,RD(MAX)<360M@10V,VTH2.5V~4
GC11N65M is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N650V,RD(MAX)<360M@10V,VTH2.5V~4. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
In Stock: 800
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 768 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Submit your RFQ for GC11N65M and get a quote within 24 hours.
3J LIMITED
