N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G50N03J is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N30V,RD(MAX)<7M@10V,RD(MAX)<12M@. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.
In Stock: 4,939
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 |
| Package / Case | TO-251-3 Stub Leads, IPak |
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3J LIMITED
