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Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C45A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs9.5mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 10 V
FET Feature-
Power Dissipation (Max)80W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (3.15x3.05)
Package / Case8-PowerVDFN

Frequently Asked Questions

G45P02D3 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P20V,RD(MAX)<[email protected],RD(MAX)<

The mounting type of G45P02D3 is Surface Mount.

The operating temperature range of G45P02D3 is -55°C ~ 150°C (TJ).

The package type of G45P02D3 is 8-PowerVDFN.

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