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Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs13mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 10 V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Frequently Asked Questions

G35N02K is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N20V,RD(MAX)<[email protected],RD(MAX)<18

The mounting type of G35N02K is Surface Mount.

The operating temperature range of G35N02K is -55°C ~ 150°C (TJ).

The package type of G35N02K is TO-252-3, DPak (2 Leads + Tab), SC-63.

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