N30V,RD(MAX)<12M@10V,RD(MAX)<18M
G28N03D3 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N30V,RD(MAX)<12M@10V,RD(MAX)<18M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.
In Stock: 5,000
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 891 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 20.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| Package / Case | 8-PowerVDFN |
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3J LIMITED
