N20V,RD(MAX)<[email protected],RD(MAX)<18
G2012 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N20V,RD(MAX)<[email protected],RD(MAX)<18. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-WDFN Exposed Pad.
In Stock: 3,000
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-DFN (2x2) |
| Package / Case | 6-WDFN Exposed Pad |
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