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Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C10A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1550 pF @ 15 V
FET Feature-
Power Dissipation (Max)20W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (3.15x3.05)
Package / Case8-PowerVDFN

Frequently Asked Questions

G10P03 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P30V,RD(MAX)<[email protected],RD(MAX)<3

The mounting type of G10P03 is Surface Mount.

The operating temperature range of G10P03 is -55°C ~ 150°C (TJ).

The package type of G10P03 is 8-PowerVDFN.

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