N100V,RD(MAX)<150M@10V,RD(MAX)<1
G1006LE is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N100V,RD(MAX)<150M@10V,RD(MAX)<1. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.
In Stock: 2,988
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18.2 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 622 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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