SIC 1200V 80M MOSFET SOT-227
GCMX080B120S1-E1 is a Transistors - FETs, MOSFETs - Single manufactured by SemiQ. SIC 1200V 80M MOSFET SOT-227. Key specifications: mounting type Chassis Mount, operating temperature -55°C ~ 175°C (TJ), package / case SOT-227-4, miniBLOC.
In Stock: 10
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1336 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 142W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 |
| Package / Case | SOT-227-4, miniBLOC |
Submit your RFQ for GCMX080B120S1-E1 and get a quote within 24 hours.
3J LIMITED
