GigaDevice Semiconductor (HK) Limited
128MBIT NOR FLASH /3.3V /WSON8 6
GD25Q128EWIGR is a Memory manufactured by GigaDevice Semiconductor (HK) Limited. 128MBIT NOR FLASH /3.3V /WSON8 6. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-WDFN Exposed Pad.
In Stock: 8,654
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mb (16M x 8) |
| Memory Interface | SPI - Quad I/O |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 70µs, 2.4ms |
| Access Time | 7 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (5x6) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| GD25Q32ETIGR | GigaDevice Semiconductor (HK) Limited | 32MBIT NOR FLASH /3.3V /SOP8 150 | 100% | View |
| GD25Q128EFIRR | GigaDevice Semiconductor (HK) Limited | IC FLASH 128MBIT SPI/QUAD 16SOP | 100% | View |
| GD25Q40EKIGR | GigaDevice Semiconductor (HK) Limited | IC FLASH 4MBIT SPI/QUAD 8USON | 100% | View |
| AT25SF128A-MWUBHD-T | Renesas Electronics Corporation | 128MBIT 6X8 DFN HIGH TEP T&R | 92% | View |
| GD25Q80ETJGR | GigaDevice Semiconductor (HK) Limited | IC FLASH 8MBIT SPI/QUAD 8SOP | 92% | View |
| BY25FQ32ELTIG(R) | BYTe Semiconductor | 32 MBIT, 1.8V (1.65V TO 1.95V), | 90% | View |
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3J LIMITED
