GigaDevice Semiconductor (HK) Limited
IC FLASH 4MBIT SPI/DUAL 8USON
GD25D40EEIGR is a Memory manufactured by GigaDevice Semiconductor (HK) Limited. IC FLASH 4MBIT SPI/DUAL 8USON. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-XFDFN Exposed Pad.
In Stock: 6,073
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR (SLC) |
| Memory Size | 4Mbit |
| Memory Organization | 512K x 8 |
| Memory Interface | SPI - Dual I/O |
| Clock Frequency | 104 MHz |
| Write Cycle Time - Word, Page | 50µs, 4ms |
| Access Time | 6 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-XFDFN Exposed Pad |
| Supplier Device Package | 8-USON (3x2) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| GD25D20CKIGR | GigaDevice Semiconductor (HK) Limited | IC FLASH 2MBIT SPI/DUAL 8USON | 100% | View |
| W25Q64JVSSAQ | Winbond Electronics | NOR FLASH SERIAL | 72% | View |
| W25Q16JVZPAM | Winbond Electronics | IC FLASH | 72% | View |
| W25Q32JVZEAQ | Winbond Electronics | IC FLASH | 72% | View |
| W25N512GVBIR | Winbond Electronics | 512MB SERIAL NAND FLASH, 3V | 62% | View |
| W25N01JWTBIT | Winbond Electronics | 1G-BIT SERIAL NAND FLASH, 1.8V | 57% | View |
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3J LIMITED
