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G3R30MT12K - GeneSiC Semiconductor - Transistors - FETs, MOSFETs - Single

G3R30MT12K

GeneSiC Semiconductor

SIC MOSFET N-CH 90A TO247-4

G3R30MT12K is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. SIC MOSFET N-CH 90A TO247-4. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.

In Stock: 2,881

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs36mOhm @ 50A, 15V
Vgs(th) (Max) @ Id2.69V @ 12mA
Gate Charge (Qg) (Max) @ Vgs155 nC @ 15 V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds3901 pF @ 800 V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

Frequently Asked Questions

G3R30MT12K is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. SIC MOSFET N-CH 90A TO247-4

The mounting type of G3R30MT12K is Through Hole.

The operating temperature range of G3R30MT12K is -55°C ~ 175°C (TJ).

The package type of G3R30MT12K is TO-247-4.

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