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GPIHV30DFN - GaNPower - Transistors - FETs, MOSFETs - Single

GPIHV30DFN

GaNPower

GANFET N-CH 1200V 30A DFN8X8

GPIHV30DFN is a Transistors - FETs, MOSFETs - Single manufactured by GaNPower. GANFET N-CH 1200V 30A DFN8X8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case Die.

In Stock: 118

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C30A
Drive Voltage (Max Rds On, Min Rds On)6V
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.4V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs8.25 nC @ 6 V
Vgs (Max)+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds236 pF @ 400 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

Frequently Asked Questions

GPIHV30DFN is a Transistors - FETs, MOSFETs - Single manufactured by GaNPower. GANFET N-CH 1200V 30A DFN8X8

The mounting type of GPIHV30DFN is Surface Mount.

The operating temperature range of GPIHV30DFN is -55°C ~ 150°C (TJ).

The package type of GPIHV30DFN is Die.

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