GANFET N-CH 650V 10A DFN 5X6
GPI65010DF56 is a Transistors - FETs, MOSFETs - Single manufactured by GaNPower. GANFET N-CH 650V 10A DFN 5X6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case Die.
In Stock: 118
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 1.4V @ 3.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC @ 6 V |
| Vgs (Max) | +7.5V, -12V |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
Submit your RFQ for GPI65010DF56 and get a quote within 24 hours.
3J LIMITED
