P-CHANNEL POWER MOSFET
RFD8P06LE is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. P-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.
In Stock: 7,200
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 5V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 8A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 675 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-PAK |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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