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IRF710B - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single

IRF710B

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

IRF710B is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 31,593

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 25 V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

Frequently Asked Questions

IRF710B is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. N-CHANNEL POWER MOSFET

The mounting type of IRF710B is Through Hole.

The operating temperature range of IRF710B is -55°C ~ 150°C (TJ).

The package type of IRF710B is TO-220-3.

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