MOSFET N-CH 600V 5.5A I2PAK
FQI6N60CTU is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. MOSFET N-CH 600V 5.5A I2PAK. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.
In Stock: 1,844
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Submit your RFQ for FQI6N60CTU and get a quote within 24 hours.
3J LIMITED
